A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group IIl nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material...http://www.google.fr/patents/US20020086534?utm_source=gb-gplus-shareBrevet US20020086534 - M'''N based materials and methods and apparatus for producing same
M'''N based materials and methods and apparatus for producing same
Numéro de demande: 09/998,080 Numéro de publication: US 2002/0086534 A1 Date de dépôt: 30 nov. 2001 Brevet délivré: US6784085 ( Date de délivrance 31 août 2004)
