A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed over a plurality of doped regions,...http://www.google.fr/patents/US20040209478?utm_source=gb-gplus-shareBrevet US20040209478 - Forming tapered lower electrode phase-change memories
Numéro de demande: 10/839,499 Numéro de publication: US 2004/0209478 A1 Date de dépôt: 5 mai 2004 Brevet délivré: US6933516 ( Date de délivrance 23 août 2005)
