The present invention provides an imager device with a floating diffusion region resistant to charge leakage. The floating diffusion region is formed having a first doped region and a second doped region which has a higher concentration of dopants than the first doped region. The floating diffusion region...http://www.google.fr/patents/US20050023580?utm_source=gb-gplus-shareBrevet US20050023580 - Imager floating diffusion region and process for forming same
Imager floating diffusion region and process for forming same
Numéro de demande: 10/422,965 Numéro de publication: US 2005/0023580 A1 Date de dépôt: 25 avr. 2003 Brevet délivré: US7391066 ( Date de délivrance 24 juin 2008)
