A multi-storage nonvolatile memory of high density, high speed and high reliability has a memory transistor and switch transistors disposed on both the sides of the memory transistor. The memory transistor includes a gate insulating film having discrete traps and a memory gate electrode, whereas the...http://www.google.fr/patents/US6894344?utm_source=gb-gplus-shareBrevet US6894344 - Semiconductor integrated circuit having two switch transistors formed between two diffusion-layer lines
Semiconductor integrated circuit having two switch transistors formed ...
