A read method for multiple-value information in a semiconductor memory such as a nonvolatile semiconductor memory is introduced. The method includes obtaining a first data from a selected multiple-value memory cell by applying a first voltage to a control gate of the selected multiple-value memory cell....http://www.google.fr/patents/US20080239804?utm_source=gb-gplus-shareBrevet US20080239804 - Method for reading multiple-value memory cells
Numéro de demande: 11/692,909 Numéro de publication: US 2008/0239804 A1 Date de dépôt: 28 mars 2007 Brevet délivré: US7460397 ( Date de délivrance 2 déc. 2008)
