An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating layer is more free of pin-holes. After...http://www.google.fr/patents/US5721164?utm_source=gb-gplus-shareBrevet US5721164 - Method of manufacturing thin film transistors
