A method to fabricate a 1T-RAM device, comprising the following steps. A semiconductor substrate having an access transistor area and an exposed bottom plate within a capacitor area proximate the access transistor area is provided. A gate with an underlying gate dielectric layer within the access transistor...http://www.google.fr/patents/US6528422?utm_source=gb-gplus-shareBrevet US6528422 - Method to modify 0.25
