A testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells; the testing structure includes two large gate-controlled diodes, each diode having a diffused junction which is substantially identical with that of the other diode, the gates of the diodes having...http://www.google.fr/patents/US4542340?utm_source=gb-gplus-shareBrevet US4542340 - Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
Testing method and structure for leakage current characterization in the ...
