A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material...http://www.google.fr/patents/US7154128?utm_source=gb-gplus-shareBrevet US7154128 - Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
Nitride semiconductor growth method, nitride semiconductor substrate, and ...
