A semiconductor device includes first and second gate electrode, first and second gate insulating film, semiconductor layer, source and drain regions, and source and drain electrodes. The first gate electrode is formed in the insulating film. The first gate insulating film is formed on the first gate...http://www.google.fr/patents/US7087475?utm_source=gb-gplus-shareBrevet US7087475 - Semiconductor device having a plurality of gate electrodes and manufacturing method thereof
Semiconductor device having a plurality of gate electrodes and manufacturing ...
