A method for calibrating the wafer transfer system by using an inspection control wafer after plasma etching is described. An inspection control wafer is provided comprising a polysilicon layer overlying an oxide layer on the surface of a semiconductor substrate wherein the polysilicon layer does not...http://www.google.fr/patents/US6303509?utm_source=gb-gplus-shareBrevet US6303509 - Method to calibrate the wafer transfer for oxide etcher (with clamp)
Method to calibrate the wafer transfer for oxide etcher (with clamp)
