Memory devices having improved TPD characteristics and methods of making the memory devices are provided. The memory devices contain two or more memory cells on a semiconductor substrate and bit line openings containing a bit line dielectric between the memory cells. The memory cell contains a charge...http://www.google.fr/patents/US8012830?utm_source=gb-gplus-shareBrevet US8012830 - ORO and ORPRO with bit line trench to suppress transport program disturb
ORO and ORPRO with bit line trench to suppress transport program disturb
