A method of fabricating a film of in-situ doped polycrystalline silicon having a surface that is free of microscopic hillocks includes the steps of providing a deposition chamber and a wafer therein on which the film is to be fabricated and introducing one gas containing silicon atoms and another gas...http://www.google.fr/patents/US4460416?utm_source=gb-gplus-shareBrevet US4460416 - Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio
Method for fabricating in-situ doped polysilicon employing overdamped ...
