One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said...http://www.google.fr/patents/US7825006?utm_source=gb-gplus-shareBrevet US7825006 - Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method
Lift-off process for GaN films formed on SiC substrates and devices ...
