A diffused MOS device comprises one or more strained silicon portions formed in a carrier transit path of the DMOS device. The one or more strained silicon portions may comprise a layer of strained silicon, generally formed above a layer of lattice mismatch material such as silicon germanium or silicon...http://www.google.fr/patents/US6828628?utm_source=gb-gplus-shareBrevet US6828628 - Diffused MOS devices with strained silicon portions and methods for forming same
Diffused MOS devices with strained silicon portions and methods for forming same
