The semiconductor device comprises a first semiconductor layer 14 formed on a semiconductor substrate 10; an outgoing base electrode 26 formed on the first semiconductor layer 14; a base layer 32 formed on the first semiconductor layer, connected to the outgoing base electrode at a side surface of the...http://www.google.fr/patents/US20030025114?utm_source=gb-gplus-shareBrevet US20030025114 - Semiconductor device and method for fabricating the same
Semiconductor device and method for fabricating the same
Numéro de demande: 10/053,712 Numéro de publication: US 2003/0025114 A1 Date de dépôt: 24 janv. 2002 Brevet délivré: US6838349 ( Date de délivrance 4 janv. 2005)
