A dense and stable dielectric layer of silicon nitride and silicon dioxide suitable for use in transistors of ULSI circuits is fabricated by a high pressure process in which a nitride layer is first formed on a surface of a silicon substrate and then a silicon dioxide layer is formed on the silicon surface...http://www.google.fr/patents/US6228779?utm_source=gb-gplus-shareBrevet US6228779 - Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated ...
