After a barrier film is formed on a pad electrode, Ni particles having a diameter of 2 m or less are selectively deposited on the barrier film, thereby forming a Ni fine particle film. Then, a bump electrode made of a solder ball is provided on the pad electrode through the Ni fine particle film. Thereafter,...http://www.google.fr/patents/US20030122252?utm_source=gb-gplus-shareBrevet US20030122252 - Fine particle film forming apparatus and method and semiconductor device and manufacturing method for the same
Fine particle film forming apparatus and method and semiconductor device and ...
Numéro de demande: 10/314,364 Numéro de publication: US 2003/0122252 A1 Date de dépôt: 9 déc. 2002 Brevet délivré: US6933216 ( Date de délivrance 23 août 2005)
