Methods to reduce the minimum pitch of a pattern are described. A photo-resist on a substrate is exposed to a radiation through a mask. The mask has features that are separated by a distance. Photo-resist portions having a first exposure to the radiation, second exposure to the radiation, and third exposure...http://www.google.fr/patents/US20070269749?utm_source=gb-gplus-shareBrevet US20070269749 - Methods to reduce the minimum pitch in a pattern
