A metal-organic precursor suitable for use in a chemical vapor deposition formation of dielectric layer is disclosed. The precursor comprises a moiety that includes a first metal atom, an oxygen atom, and a nitrogen atom. The oxygen atom is chemically bonded to the metal atom and to the nitrogen atom....http://www.google.fr/patents/US6524967?utm_source=gb-gplus-shareBrevet US6524967 - Method for incorporating nitrogen into a dielectric layer using a special precursor
Method for incorporating nitrogen into a dielectric layer using a special ...
