In the manufacture of an MOS transistor in a substrate (1), source/drain zones (9) and a doped gate electrode (10) are simultaneously formed by drive-out from a doped layer (8). The dopant distribution in the source/drain zones (9) is set by a permeable diffusion barrier (7) at the surface of the source/drain...http://www.google.fr/patents/US5998271?utm_source=gb-gplus-shareBrevet US5998271 - Method of producing an MOS transistor
