A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB etching...http://www.google.fr/patents/US6670717?utm_source=gb-gplus-shareBrevet US6670717 - Structure and method for charge sensitive electrical devices
Structure and method for charge sensitive electrical devices
