Method of manufacturing a semiconductor device having a buried wiring structure comprising copper in which a conductive barrier film 17a of buried second layer wirings L2 is protected against oxidation upon forming an insulative film 15b for wiring cap with an SiON film formed by a plasma CVD method...http://www.google.fr/patents/US20030087513?utm_source=gb-gplus-shareBrevet US20030087513 - Method for manufacturing semiconductor device
Numéro de demande: 10/279,827 Numéro de publication: US 2003/0087513 A1 Date de dépôt: 25 oct. 2002 Brevet délivré: US6730594 ( Date de délivrance 4 mai 2004)
