Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands,...http://www.google.fr/patents/US6084247?utm_source=gb-gplus-shareBrevet US6084247 - Semiconductor device having a catalyst enhanced crystallized layer
Semiconductor device having a catalyst enhanced crystallized layer
