Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided....http://www.google.fr/patents/US7414268?utm_source=gb-gplus-shareBrevet US7414268 - High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
High voltage silicon carbide MOS-bipolar devices having bi-directional ...
