A semiconductor device includes a semiconductor substrate, a gate insulator film formed on a bottom surface and a side surface of a groove formed in the semiconductor substrate, a gate electrode having a lower portion buried in the groove on whose bottom and side surface the gate insulator film is formed,...http://www.google.fr/patents/US6664592?utm_source=gb-gplus-shareBrevet US6664592 - Semiconductor device with groove type channel structure
Semiconductor device with groove type channel structure
