A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls...http://www.google.fr/patents/US7531437?utm_source=gb-gplus-shareBrevet US7531437 - Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material
Method of forming metal gate electrodes using sacrificial gate electrode ...
