A phase change memory device with a reduced phase change volume and lower drive current and a method for forming the same are provided. The method includes forming a bottom insulating layer comprising a bottom electrode contact, forming a bottom electrode film on the bottom electrode contact, forming...http://www.google.fr/patents/US20070012905?utm_source=gb-gplus-shareBrevet US20070012905 - Novel phase change random access memory
Numéro de demande: 11/180,430 Numéro de publication: US 2007/0012905 A1 Date de dépôt: 13 juil. 2005 Brevet délivré: US7504652 ( Date de délivrance 17 mars 2009)
