A method of forming conductive interconnections on an integrated circuit device and an integrated circuit device comprising the same is disclosed. The method is comprised of forming first and second layers of dielectric materials that are selectively etchable with respect to one another. The method also...http://www.google.fr/patents/US6228758?utm_source=gb-gplus-shareBrevet US6228758 - Method of making dual damascene conductive interconnections and integrated circuit device comprising same
Method of making dual damascene conductive interconnections and integrated ...
