An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming...http://www.google.fr/patents/US6243321?utm_source=gb-gplus-shareBrevet US6243321 - Electrically alterable non-volatile memory with n-bits per cell
Electrically alterable non-volatile memory with n-bits per cell
