A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact...http://www.google.fr/patents/US20090166659?utm_source=gb-gplus-shareBrevet US20090166659 - High Efficiency Group III Nitride LED with Lenticular Surface
High Efficiency Group III Nitride LED with Lenticular Surface
Numéro de demande: 12/401,832 Numéro de publication: US 2009/0166659 A1 Date de dépôt: 11 mars 2009 Brevet délivré: US8154039 ( Date de délivrance 10 avr. 2012)
