The present invention is related to an efficient thermal oxidation process that allows the controlled growth of in-situ cleaned high quality thin oxides on a silicon-containing substrate. Said oxidation is performed in an ambient comprising at least the reaction products of a chloro-carbon precursor...http://www.google.fr/patents/US6303522?utm_source=gb-gplus-shareBrevet US6303522 - Oxidation in an ambient comprising ozone and the reaction products of an organic chloro-carbon precursor
Oxidation in an ambient comprising ozone and the reaction products of an ...
