A resistance memory element which memorizes a high resistance state and a low resistance state and is switched between the high resistance state and the low resistance state by an application of a voltage includes a first electrode layer of titanium nitride film, a resistance memory layer formed on the...http://www.google.fr/patents/US20090236581?utm_source=gb-gplus-shareBrevet US20090236581 - RESISTANCE MEMORY ELEMENT, METHOD OF MANUFACTURING RESISTANCE MEMORY ELEMENT AND SEMICONDUCTOR MEMORY DEVICE
RESISTANCE MEMORY ELEMENT, METHOD OF MANUFACTURING RESISTANCE MEMORY ELEMENT ...
Numéro de demande: 12/473,469 Numéro de publication: US 2009/0236581 A1 Date de dépôt: 28 mai 2009 Brevet délivré: US8102003 ( Date de délivrance 24 janv. 2012)
