A semiconductor device fabrication method of the present invention includes: a step of forming an insulation film on a semiconductor substrate on which a plurality of gate electrodes are formed; a step of applying SOG of HSQ type on the insulation film; a first firing step of firing the resulting substrate...http://www.google.fr/patents/US6541358?utm_source=gb-gplus-shareBrevet US6541358 - Method of fabricating a semiconductor device by filling gaps between gate electrodes with HSQ
Method of fabricating a semiconductor device by filling gaps between gate ...
