A semiconductor device is made by forming a plurality of conductive pillars vertically over a temporary carrier. A conformal insulating layer is formed over the conductive pillars. A conformal conductive layer is formed over the conformal insulating layer. A first conductive pillar, conformal insulating...http://www.google.fr/patents/US7989270?utm_source=gb-gplus-shareBrevet US7989270 - Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors
Semiconductor device and method of forming three-dimensional vertically ...
