A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2,...http://www.google.fr/patents/US7902042?utm_source=gb-gplus-shareBrevet US7902042 - Method of manufacturing SOI wafer and thus-manufactured SOI wafer
Method of manufacturing SOI wafer and thus-manufactured SOI wafer
