A sensing method for a memory cell as described herein includes selecting a memory cell. A first bias applied to the memory cell induces a first response in the memory cell. A second bias applied to the memory cell induces a second response in the memory cell, the second bias different from the first...http://www.google.fr/patents/US7719913?utm_source=gb-gplus-shareBrevet US7719913 - Sensing circuit for PCRAM applications
