A test device and method for determining parameters of a plurality of vias formed into a dielectric material making contact to a buried conductive layer. The present invention is comprised of a sample structure disposed within the material through which a plurality of vias are to be formed. The sample...http://www.google.fr/patents/US6162650?utm_source=gb-gplus-shareBrevet US6162650 - Via alignment, etch completion, and critical dimension measurement method and structure
Via alignment, etch completion, and critical dimension measurement method ...
