A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for cell dielectrics for integrated circuits, particularly for...http://www.google.fr/patents/US7393785?utm_source=gb-gplus-shareBrevet US7393785 - Methods and apparatus for forming rhodium-containing layers
Methods and apparatus for forming rhodium-containing layers
