A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (SiNXBYOz) containing boron is formed...http://www.google.fr/patents/US6891236?utm_source=gb-gplus-shareBrevet US6891236 - Semiconductor device and method of fabricating the same
Semiconductor device and method of fabricating the same
