The intermetallic compound used to form a liner in the wiring of the semiconductor device is formed from a compound of a main component of the metal film used as the wiring and at least one metal material made to be dissolved in the main component to form a solid solution, or from a compound of at least...http://www.google.fr/patents/US6069071?utm_source=gb-gplus-shareBrevet US6069071 - Method of manufacturing an interconnect by dissolving an intermetallic compound film into a main component of a metal film
Method of manufacturing an interconnect by dissolving an intermetallic ...