A field effect transistor has a quantum well structure covered with an n-type cap layer, and control gate electrodes are provided on the cap layer on both sides of a gate electrode between source and drain electrodes, wherein the gate electrode and the control gate electrodes are biased in such a manner...http://www.google.fr/patents/US5285081?utm_source=gb-gplus-shareBrevet US5285081 - Field effect transistor having quasi one-dimensional electron gas confined under electron resonance
Field effect transistor having quasi one-dimensional electron gas confined ...
