A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active...http://www.google.fr/patents/US5862167?utm_source=gb-gplus-shareBrevet US5862167 - Light-emitting semiconductor device using gallium nitride compound
Light-emitting semiconductor device using gallium nitride compound
