A leakage current of the MOS transistor of a power control section at a standby time is drastically reduced and the reduction of the consumption power is achieved. A memory module is provided with power control sections. When either of the memory mats is not selected, the power control sections stop...http://www.google.fr/patents/US20060133180?utm_source=gb-gplus-shareBrevet US20060133180 - Semiconductor memory device and semiconductor integrated circuit device
Semiconductor memory device and semiconductor integrated circuit device
Numéro de demande: 11/353,967 Numéro de publication: US 2006/0133180 A1 Date de dépôt: 15 févr. 2006 Brevet délivré: US7251182 ( Date de délivrance 31 juil. 2007)
