A method for manufacturing a DRAM capacitor is provided to form a lower electrode with a cylindrical profile by using a first stage and a second stage. The stages provide different etching rates in various situations. The invention uses the stages to allow the part of the second polysilicon layer between...http://www.google.fr/patents/US6080619?utm_source=gb-gplus-shareBrevet US6080619 - Method for manufacturing DRAM capacitor
