An SOI substrate comprises a buried silicon oxide layer formed directly under an active silicon layer, and a layer containing phosphorus therein formed under the buried silicon oxide layer. The layer containing phosphorus therein acts as the getter layer, so that an effective gettering...http://www.google.fr/patents/US5773152?utm_source=gb-gplus-shareBrevet US5773152 - SOI substrate having a high heavy metal gettering effect for semiconductor device
SOI substrate having a high heavy metal gettering effect for semiconductor ...
