A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided...http://www.google.fr/patents/US7265374?utm_source=gb-gplus-shareBrevet US7265374 - Light emitting semiconductor device
