A dual injector, floating-gate MOS non-volatile semiconductor memory device (DIFMOS) has been fabricated, using process specifications and design rules of the same general character previously developed for single-level metal gate CMOS devices. An electron injector junction (p+/n) is avalanched to "write"...http://www.google.fr/patents/US4037242?utm_source=gb-gplus-shareBrevet US4037242 - Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
Dual injector, floating gate MOS electrically alterable, non-volatile ...
