A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600.degree. C. to about 700.degree. C. and at times ranging from about 3 seconds to...http://www.google.fr/patents/US5264724?utm_source=gb-gplus-shareBrevet US5264724 - Silicon nitride for application as the gate dielectric in MOS devices
Silicon nitride for application as the gate dielectric in MOS devices
