The present invention provides a semiconductive substrate which includes front and back surfaces and a hole which extends through the substrate and between the front and back surfaces. The hole is defined in part by an interior wall portion and forms an outer conductive sheath. Conductive material is...http://www.google.fr/patents/US6828656?utm_source=gb-gplus-shareBrevet US6828656 - High performance silicon contact for flip chip and a system using same
High performance silicon contact for flip chip and a system using same
